Condensed Matter Seminar Announcement Dr. Johan Ackerman Freescale Research Laboratory " Functionality and Reliability of 4Mb Toggle MRAM " Date: Wednesday, April 20, 2005 416 Phy/Geo Time: 1:00 pm. NOTE SPECIAL DAY AND TIME Abstract: Magnetoresistive random access memory (MRAM) employs a magnetoresistive device integrated with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies: MRAM is non-volatile, has unlimited read and write endurance, and has demonstrated high-speed read and write operations. The properties of our unique toggle-switching MRAM bit is discussed and compared to those of the conventional switching approach. Reliability of the MTJ tunneling dielectric will be discussed as well as mechanisms that may affect write reliability. Scaling of these results to operating conditions demonstrates the reliability of our 4Mb MRAM chip.